photo ic diode reduced color temperature errors s11154-201ct www.hamamatsu.com 1 excellent linearity suitable for lead-free re ow (rohs compliance) low output deviation by different color temperature light source absolute maximum ratings (ta=25 c) parameter symbol condition speci cation unit reverse voltage v r -0.5 to +12 v photocurrent i l 5m a forward current i f 5m a power dissipation * 1 p 150 mw operating temperature topr no dew condensation * 2 -30 to +80 c storage temperature tstg no dew condensation * 2 -40 to +85 c reflow soldering conditions * 3 tsol peak temperature 260 c max., two times (see p.7) - * 1: power dissipation decreases at a rate of 2 mw/c above ta=25 c. *2: when there is a temperature difference between a product and the surrounding area in high humidity environment, dew condensation may occur on the product surface. dew condensation on the product may cause deterioration in characteristics and reliability. * 3: jedec level 3 note: exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. always be sure to use the product within the absolute maximum ratings. electrical and optical characteristics (ta=25 c) parameter symbol condition min. typ. max. unit spectral response range - 480 to 640 - nm peak sensitivity wavelength p - 580 - nm dark current i d v r =5 v - 1.0 50 na photocurrent i l v r =5 v, 2856 k 100 lx 70 - 150 a rise time* 4 tr 10 to 90 %, v r =7.5 v r l =10 k , =560 nm - 6.0 - ms fall time * 4 tf - 2.5 - ms the s11154-201ct is a photo ic diode with spectral response characteristics that closely resemble human eye sensitivity. two active areas are formed on the same chip, and the outputs of the two active areas are subtracted from each other by the cur- rent ampli er circuit, in order to have sensitivity almost only in the visible range and reduce the color temperature errors. energy-saving sensor for large-screen tvs, etc. spectral response close to human eye sensitivity reduced color temperature error lower output-current variation compared with phototransistors various types of light level measurement features applications
photo ic diode s11154-201ct 2 spectral response photocurrent vs. illuminance 20 40 60 80 100 0 200 400 600 800 wavelength (nm) 1000 1200 relative sensitivity (%) (typ. ta=25 c, v r =5 v) human eye sensitivity s11154-201ct pulsed light from led (=560 nm) v o load resistance r l 7.5 v 90 % 2.5 v 10 % v o tr tf 0.1 f illuminance ( lx) photocurrent 1 a 10 a 100 a 10 ma 1 ma 100 na 0.1 1 10 100 1000 0 1000 (typ. ta=25 c, v r =5 v, 2856 k) kpicb0129eb kpicb0141ec * 4 rise/fall time measurement method kpicc0041ea
photo ic diode s11154-201ct 3 rise/fall times vs. load resistance photocurrent vs. ambient temperature 1000 100 10 1 0.1 100 1 k 10 k load resistance () 100 k 1 m rise/fall times (ms) (typ. ta=25 c, v r =7.5 v, white led, vo=2.5 v) tr tf 20 40 60 80 120 160 100 140 180 0 -25 0 25 50 75 100 *at ta=25 c normaolized to 100. ambient temperature (c) photocurrent (relative value) * (typ. v r =5 v, 2856 k, io=0.1 ma) kpicb0143ea kpicb0144ea 0.2 0.6 1.0 1.4 1.6 0.4 0.8 1.2 0.0 2800 k 2800 k: silica bulb 2856 k: a light source 3000 k: fluorescent light bulb 5000 k: fluorescent light bulb 7200 k: fluorescent light bulb * at 2856 k normalized to 100 2856 k 3000 k 5000 k 7200 k relative output * (normalized to "a light source" at 2856 k and 100 lx) kpicb0140ec color temperature error (difference between various light sources)
photo ic diode s11154-201ct 4 dark current vs. ambient temperature 1 a 10 na 100 na 1 na 100 pa 10 pa 02 55 0 ambient temperature (c) 75 100 dark current (typ. ta=25 c, v r =5 v) 90 80 70 60 50 40 30 90 80 70 60 50 40 30 20 10 0 10 20 0 20406080100 20 40 60 80 100 relative sensitivity (%) (typ. ta=25 c, tungsten lamp) 20 0 40 60 80 100 kpicb0146ea photodiode for signal offset cathode anode c l r l vout reverse bias power supply the drawing surrounded by the dotted line shows a schematic diagram of the photo ic. current amp (approx. 30000 times) photodiode for signal detection internal protection resistance (approx. 150 ) the photo ic diode must be reverse-biased so that a positive potential is applied to the cathode. to eliminate high-frequency components, we recommend plac- ing a load capacitance c l in parallel with load resistance r l as a low-pass lter. cut-off frequency fc 2 c l r l 1 block diagram kpicc0132ea directivity kpicb0145ea
photo ic diode s11154-201ct 5 dimensional outline (unit: mm) index mark photosensitive area 0.32 0.46 1.4 (0.25) 2 . 0 0.4 1.0 1.5 1.0 1.0 0.4 1.25 recommended land pattern cathode anode tolerance unless otherwise noted: 0.2 values in parentheses indicate reference value. electrode standard packing: reel (3000 pcs/reel) 0.4 0.8 kpica0072eb standard packing specifications kpicc0234ea ?1.5 reel feed direction 2.00 4.00 0.23 1.04 1.75 5.25 8.00 reel (conforms to jeita et-7200) embossed tape (unit: mm, material: ps, conductive) packing quantity 3000 pcs/reel packing type reel and desiccant in moisture-proof packing (vacuum-sealed) dimensions hub diameter tape width material electrostatic characteristic 178 mm 60 mm 8 mm ps conductive
photo ic diode s11154-201ct 6 0.1 0.2 0.3 0.4 0.5 0.6 0 012 reverse voltage (v) 4 35 photocurrent (ma) (typ. ta=25 c) saturation region approx. 420 lx internal protection resistance rin=approx. 150 530 lx 440 lx 350 lx 250 lx 160 lx rising voltage 85 lx load line vcc=3 v, r l =1 k load line vcc=5 v, r l =1 k saturation region approx. 210 lx kpicb0147eb figure 2 photocurrent vs. reverse voltage operating voltage, output characteristics r l (external resistor) i l photo ic diode rin=150 20% (internal protection resistor) vcc kpicc0128ec figure 1 measurement circuit example figure 2 shows the photocurrent vs. reverse voltage characteristics (light source: led) for the measurement circuit example in figure 1. the output curves are shown for illuminance levels. the output curves rise from a reverse voltage (rising voltage) of approximately 0.7 v (10%). to protect the photo ic diode from excessive current, a 150 (20%) protection resistor is inserted in the circuit. reverse voltage v r when the photo ic diode is saturated is the sum of vbe(on) and the voltage drop across the protection resistor rin [equation (1 )]. v r = vbe(on) + i l rin ............ (1) the photodiode?s reverse voltage (v r ) is expressed by equation (2) according to the voltage drop across the external resistor. this is indicated as load lines in figure 2. v r = vcc - i l r l ............ (2) in figure 2, the intersections between the output curves and the load lines are the saturation points. from these points, the m aximum detectable light level can be speci ed. since the maximum light level is determined by the supply voltage (vcc) and load resistance (r l ), adjust them according to the operating conditions. note: the temperature characteristics of vbe(on) is approximately -2 mv/c, and that of the protection resistor is approximatel y 0.1%/c.
photo ic diode s11154-201ct 7 lineup of illuminance sensors time temperature 300 c 217 c 200 c 150 c preheat 160 s max. 260 c max. soldering 100 s max. kpicb0119eb example of temperature profile measured with hot-air reflow oven for our product testing ? this product supports lead-free soldering. after unpacking, store it in an environment at a temperature of 30 c or less and a humidity of 60% or less, and perform soldering within 168 hours. ? the effect that the product receives during reflow soldering varies depending on the circuit board and reflow oven that are use d. when setting the reflow soldering conditions, check for any problems by testing out the reflow soldering methods in advance. related information a disclaimer precautions www.hamamatsu.com/sp/ssd/doc_en.html type no. type output package (mm) reverse voltage [supply voltage] spectral response range (nm) photocurrent * 2856 k, 100 lx rise time (ms) photo s9648-200sb photo ic diode analog current output ?5 3.5 t (top view) -0.5 to +12 v 300 to 820 0.26 ma 6 s9067-201ct 3.2 2.7 1.1 t cob 0.26 ma s11154-201ct 2.0 1.25 0.8 t cob 480 to 640 0.11 ma 6 s9705 light-to-frequency converter photo ic frequency output ( for direct connection to microcontroller) 3.0 4.0 1.3 t 4-pin plastic [2.7 to 5.5 v] 380 to 640 50 khz - * s9705: frequency output
cat. no. kpin1092e03 aug. 2015 dn 8 www.hamamatsu.com hamamatsu photonics k.k., solid state division 1126-1 ichino-cho, higashi-ku, hamamatsu city, 435-8558 japan, telephone: (81) 53-434-3311, fax: (81) 53-434-5184 u.s.a.: hamamatsu corporation: 360 foothill road, bridgewater, n.j. 08807, u.s.a., telephone: (1) 908-231-0960, fax: (1) 908-23 1-1218 germany: hamamatsu photonics deutschland gmbh: arzbergerstr. 10, d-82211 herrsching am ammersee, germany, telephone: (49) 8152-375-0, fax: (49) 8152-265-8 france: hamamatsu photonics france s.a.r.l.: 19, rue du saule trapu, parc du moulin de massy, 91882 massy cedex, france, telephone: 33-(1) 69 53 71 00, fax: 33-(1) 69 53 71 10 united kingdom: hamamatsu photonics uk limited: 2 howard court, 10 tewin road, welwyn garden city, hertfordshire al7 1bw, united kingdom, telephone: (44) 1707-294888, fax: (44) 1707-325777 north europe: hamamatsu photonics norden ab: torshamnsgatan 35 16440 kista, sweden, telephone: (46) 8-509-031-00, fax: (46) 8-5 09-031-01 italy: hamamatsu photonics italia s.r.l.: strada della moia, 1 int. 6, 20020 arese (milano), italy, telephone: (39) 02-93581733 , fax: (39) 02-93581741 china: hamamatsu photonics (china) co., ltd.: b1201, jiaming center, no.27 dongsanhuan beilu, chaoyang district, beijing 100020 , china, telephone: (86) 10-6586-6006, fax: (86) 10-6586-2866 product specifications are subject to change without prior notice due to improvements or other reasons. this document has been carefully prepared and the information contained is believed to be accurate. in rare cases, however, there may be inaccuracies such as text errors. before using these products, always contact us for the delivery specification sheet to check the latest specifications. the product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. however, even if within the warranty period we accept absolutely no liability for any loss caused by natural d isasters or improper product use. copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. information described in this material is current as of august, 2015. photo ic diode s11154-201ct
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